Did you mean: 2N6650
Product Datasheet Search Results:
- 2N6650
- Advanced Semiconductor, Inc.
- Silicon Transistor Selection Guide
- 2N6656
- Thomson-csf
- Shortform Semiconductor Catalogue 1982
- 2N6657
- Thomson-csf
- Shortform Semiconductor Catalogue 1982
- 2N6658
- Thomson-csf
- Shortform Semiconductor Catalogue 1982
- 2N6659
- Thomson-csf
- Shortform Semiconductor Catalogue 1982
- 2N6650
- Central Semiconductor
- Darlington Transistors PNP Pwr Darlington
- 2N6650LEADFREE
- Central Semiconductor Corp.
- 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
- 2N6653
- Diode Transistor Co., Inc.
- Transistor Short Form Data
- 2N6654
- Diode Transistor Co., Inc.
- Transistor Short Form Data
Product Details Search Results:
Centralsemi.com/2N6650
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"100 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"6 MHz","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GEN...
1326 Bytes - 06:54:12, 17 November 2024
Centralsemi.com/2N6650LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"100 W","Collector Current-Max (IC)":"10 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"80 V","Terminal Position":"BOTTOM","Transistor Application":"SWITCHING","Case Conne...
1421 Bytes - 06:54:12, 17 November 2024
Dla.mil/2N6650+JAN
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"1.0k","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"20k","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"300u","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JAN2N6650","@I(C) (A) (Test Condition)":"10","Semiconductor Material":"Silicon"...
1031 Bytes - 06:54:12, 17 November 2024
Dla.mil/2N6650+JANTX
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"1.0k","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"20k","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"300u","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTX2N6650","@I(C) (A) (Test Condition)":"10","Semiconductor Material":"Silico...
1043 Bytes - 06:54:12, 17 November 2024
Dla.mil/2N6650+JANTXV
{"V(CE)sat Max.(V)":"3.0","Absolute Max. Power Diss. (W)":"100","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"1.0k","I(C) Abs.(A) Collector Current":"10","h(FE) Max. Current gain.":"20k","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"300u","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"100m","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTXV2N6650","@I(C) (A) (Test Condition)":"10","Semiconductor Material":"Silic...
1049 Bytes - 06:54:12, 17 November 2024
Dla.mil/2N665+JAN
{"V(CE)sat Max.(V)":"0.9","V(BR)CBO (V)":"80","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"80","@V(CBO) (V) (Test Condition)":"80","I(CBO) Max. (A)":"10m","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"20k","@V(CE) (V) (Test Condition)":"14","@I(B) (A) (Test Condition)":"200m","V(BR)CEO (V)":"40","Military":"Y","Mil Number":"JAN2N665","@I(C) (A) (Test Condition)":"2.0","t(r) Max. (s) Rise time":"5.0u","t(f) Max. (s) Fall time.":"5.0u"}...
1006 Bytes - 06:54:12, 17 November 2024
Microsemi.com/2N6650
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"10 A","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"DARLINGTON","Number of Terminals":"2","Numbe...
1188 Bytes - 06:54:12, 17 November 2024
Microsemi.com/2N6650JANTX
{"Polarity":"PNP","Collector Current (DC) ":"10 A","Collector-Emitter Saturation Voltage":"2 V","Collector-Emitter Voltage":"80 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Package Type":"TO-3","Collector-Base Voltage":"80 V","DC Current Gain":"100","Pin Count":"2 +Tab","Number of Elements":"1"}...
1426 Bytes - 06:54:12, 17 November 2024
Microsemi.com/2N6653
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"300 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"20 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1215 Bytes - 06:54:12, 17 November 2024
Microsemi.com/2N6654
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"350 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"20 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1216 Bytes - 06:54:12, 17 November 2024
Microsemi.com/2N6655
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Number of Terminals":"2","DC Current Gain-Min (hFE)":"10","Collector-emitter Voltage-Max":"400 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"15 MHz","Collector Current-Max (IC)":"20 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"FLANGE MOUNT","Number of...
1187 Bytes - 06:54:12, 17 November 2024
Microsemi.com/JANTX2N6650
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"10A","DC Current Gain (hFE) (Min) @ Ic, Vce":"1000 @ 5A, 3V","Transistor Type":"PNP - Darlington","Product Photos":"JANTX2N6650","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"3V @ 100\u00b5A, 10A","Current - Collector Cutoff (Max)":"1mA","Series":"Military, MIL-PRF-19500/527","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"80V","Supplier Device Package":"TO-204AA (TO-3)","Packaging"...
1678 Bytes - 06:54:12, 17 November 2024
Documentation and Support
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VLVAW2N66075AA.pdf | 4.86 | 1 | Request |