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Dla.mil/2N3810+JANS
{"P(D) Max.(W) Power Dissipation":"0.6","V(BR)CBO (V)":"60","h(FE) Min. Static Current Gain":"150","Type (NPN/PNP)":"PNP","I(C) Abs.(A) Collector Current":"50m","h(FE) Max. Current gain.":"450","@V(CBO) (V) (Test Condition)":"50","I(CBO) Max. (A)":"10u","Number of Devices":"2","Package":"TO-78","Emitter-Base Diode (Y/N)":"No","@V(CE) (V) (Test Condition)":"5.0","V(BR)CEO (V)":"60","Military":"Y","Mil Number":"JANS2N3810","@I(C) (A) (Test Condition)":"1.0m","Semiconductor Material":"Silicon"}...
1026 Bytes - 15:59:15, 16 November 2024
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