Product Details Search Results:

Dla.mil/1N6160A+JAN
{"V(RWM) (V) Work.Pk.Rev.Voltage":"42.6","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"77","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"58.8","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"56","V(BR) Min.(V)Breakdown Voltage":"53.2","Military":"Y","Mil Number":"JAN1N6160A","@I(R) (A) (Test Condition)":"20m","@I(PP) (A) (Test Condition)":"19.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
974 Bytes - 02:11:14, 07 October 2024
Dla.mil/1N6160A+JANTX
{"V(RWM) (V) Work.Pk.Rev.Voltage":"42.6","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"77","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"58.8","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"56","V(BR) Min.(V)Breakdown Voltage":"53.2","Military":"Y","Mil Number":"JANTX1N6160A","@I(R) (A) (Test Condition)":"20m","@I(PP) (A) (Test Condition)":"19.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
987 Bytes - 02:11:14, 07 October 2024
Dla.mil/1N6160A+JANTXV
{"V(RWM) (V) Work.Pk.Rev.Voltage":"42.6","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"77","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"58.8","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"56","V(BR) Min.(V)Breakdown Voltage":"53.2","Military":"Y","Mil Number":"JANTXV1N6160A","@I(R) (A) (Test Condition)":"20m","@I(PP) (A) (Test Condition)":"19.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
992 Bytes - 02:11:14, 07 October 2024
Dla.mil/1N6160+JAN
{"V(RWM) (V) Work.Pk.Rev.Voltage":"42.6","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"80.7","t(resp) Max.(s) Response Time":"5n","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"61.6","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"56","V(BR) Min.(V)Breakdown Voltage":"50.4","Military":"Y","Mil Number":"JAN1N6160","@I(R) (A) (Test Condition)":"20m","@I(PP) (A) (Test Condition)":"18.6","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
1008 Bytes - 02:11:14, 07 October 2024
Dla.mil/1N6160+JANTX
{"V(RWM) (V) Work.Pk.Rev.Voltage":"42.6","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"80.7","t(resp) Max.(s) Response Time":"5n","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"61.6","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"56","V(BR) Min.(V)Breakdown Voltage":"50.4","Military":"Y","Mil Number":"JANTX1N6160","@I(R) (A) (Test Condition)":"20m","@I(PP) (A) (Test Condition)":"18.6","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
1020 Bytes - 02:11:14, 07 October 2024
Dla.mil/1N6160+JANTXV
{"V(RWM) (V) Work.Pk.Rev.Voltage":"42.6","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"80.7","t(resp) Max.(s) Response Time":"5n","Package":"DO-204AE","V(BR) Max.(V)Breakdown Voltage":"61.6","P(D) Max.(W) Power Dissipation":"5","V(BR) Nom.(V)Rev.Break.Voltage":"56","V(BR) Min.(V)Breakdown Voltage":"50.4","Military":"Y","Mil Number":"JANTXV1N6160","@I(R) (A) (Test Condition)":"20m","@I(PP) (A) (Test Condition)":"18.6","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...
1026 Bytes - 02:11:14, 07 October 2024
Microchip.com/JANTX1N6160A
857 Bytes - 02:11:14, 07 October 2024
Microchip.com/JANTX1N6160AUS
{"Polarity":"Bi-Directional","Clamping Voltage":"77(V)","Test Current (It)":"20(mA)","Reverse Breakdown Voltage":"53.2(V)","Mounting":"Surface Mount","Rad Hardened":"No","Leakage Current (Max)":"0.005(uA)","Packaging":"Bag","Operating Temp Range":"-55C to 175C","Package Type":"G-MELF","Number of Elements":"1","Peak Pulse Current":"19.5(A)","Reverse Stand-off Voltage ":"42.6(V)","Pin Count":"2","Peak Pulse Power Dissipation":"1500(W)"}...
1518 Bytes - 02:11:14, 07 October 2024
Microsemi.com/1N6160
{"Status":"ACTIVE","Polarity":"BIDIRECTIONAL","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"HERMETIC SEALED, GLASS,.G PACKAGE-2","Breakdown Voltage-Min":"53.2 V","Terminal Form":"WIRE","Package Style":"LONG FORM","Non-rep Peak Rev Power Dis-Max":"1500 W","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"3 W","Case Connection":"ISOLATED","Stand-off Voltage":"42.6 V","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE","Package Sha...
1281 Bytes - 02:11:14, 07 October 2024
Microsemi.com/1N6160A
{"Category":"Circuit Protection","Packaging":"Bulk","Voltage - Clamping (Max) @ Ipp":"77V","Mounting Type":"Through Hole","Family":"TVS - Diodes","Series":"-","Standard Package":"1","Datasheets":"1N6138A - 1N6173A","Voltage - Breakdown (Min)":"53.2V","Power Line Protection":"No","Voltage - Reverse Standoff (Typ)":"42.6V","Applications":"General Purpose","Operating Temperature":"-55\u00b0C ~ 175\u00b0C (TJ)","Capacitance @ Frequency":"-","Supplier Device Package":"Axial","Package \/ Case":"B, Axial","Bidirec...
1510 Bytes - 02:11:14, 07 October 2024
Microsemi.com/1N6160AHR
{"Status":"ACTIVE","Polarity":"BIDIRECTIONAL","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"50.4 V","Terminal Form":"WIRE","Package Style":"LONG FORM","Non-rep Peak Rev Power Dis-Max":"1500 W","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"5 W","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"AVALANCHE","Number of Terminals":"2","Numb...
1200 Bytes - 02:11:14, 07 October 2024
Microsemi.com/1N6160AHRS
{"Status":"ACTIVE","Polarity":"BIDIRECTIONAL","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"50.4 V","Terminal Form":"WIRE","Package Style":"LONG FORM","Non-rep Peak Rev Power Dis-Max":"1500 W","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"5 W","Case Connection":"ISOLATED","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"AVALANCHE","Number of Terminals":"2","Numb...
1206 Bytes - 02:11:14, 07 October 2024