Product Datasheet Search Results:
- BSM10GP120
- Eupec Power Semiconductors
- IGBT - Module
- BSM10GP120-B9
- Eupec Power Semiconductors
- TRANS IGBT MODULE N-CH 1200V 20A
- BSM10GP120
- Infineon Technologies
- IGBT Modules 1200V 10A PIM
Product Details Search Results:
Infineon.com/BSM10GP120
{"Gate-Emitter Leakage Current":"300 nA","Continuous Collector Current at 25 C":"20 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"100 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Package / Case":"EconoPIM2","Collector-Emitter Saturation Voltage":"2.4 V","Configuratio...
1646 Bytes - 18:47:45, 18 April 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSM10GP120.pdf | 0.11 | 1 | Request |